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            BYV29FX-600 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2012. All rights reserved. Product data sheet Rev. 5 — 16 April 2012 4 of 11 NXP Semiconductors BYV29FX-600 Enhanced ultrafast power diode 5. Thermal characteristics 6. Isolation characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink with heatsink compound ; see Figure 4 --5.5K/W Rth(j-a) thermal resistance from junction to ambient free air -55-K/W Fig 4. Transient thermal impedance from junction to heatsink as a function of pulse width 001aaf257 10?2 10?1 1 10 Zth(j-h) (K/W) 10?3 ?6 tp (s) 10 10110 ?1 10?5 10?3 10?2 10?4 tp t = p T P t T δ Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all pins to external heatsink; sinusoidal waveform; clean and dust free - - 2500 V Cisol isolation capacitance f = 1 MHz ; from cathode to external heatsink - 10 - pF |